UFB200FA60P_10 Datasheet, PDF (2/8 Pages) Vishay Siliconix – Insulated Ultrafast Rectifier Module, 200 A

UFB200FA60P
Vishay Semiconductors
Insulated Ultrafast
Rectifier Module, 200 A
ELECTRICAL SPECIFICATIONS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Cathode to anode breakdown voltage V_BR
Forward voltage
V_FM
Reverse leakage current
I_RM
Junction capacitance
C_T
I_R = 100 μA
I_F = 100 A
I_F = 200 A
I_F = 100 A
I_F = 200 A
T_J = 125 °C
V_R = V_R rated
T_J = 175 °C, V_R = V_R rated
V_R = 600 V
MIN.
600
-
-
-
-
-
-
-
TYP.
-
1.46
1.7
1.23
1.5
0.1
0.3
80
MAX.
-
1.78
2.05
1.52
1.78
100
1.0
-
UNITS
V
μA
mA
pF
DYNAMIC RECOVERY CHARACTERISTICS (T_J = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
Reverse recovery time
Peak recovery current
Reverse recovery charge
t_rr
I_RRM
Q_rr
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
T_J = 25 °C
T_J = 125 °C
-
-
I_F = 50 A
-
dI_F/dt = 200 A/μs
V_R = 200 V
-
-
-
TYP.
83
182
7
18
290
1595
MAX.
108
235
10
22
540
2585
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Junction to case,
single leg conducting
Junction to case,
both leg conducting
R_thJC
Case to heatsink
R_thCS
Flat, greased surface
Weight
Mounting torque
MIN.
-
-
-
-
-
TYP.
-
-
0.05
30
1.3
MAX. UNITS
0.5
0.25 ^°C/W
-
-
g
-
N·m
www.vishay.com
2
For technical questions within your region, please contact one of the following: Document Number: 94566
[e-mail], [e-mail], [e-mail]
Revision: 22-Jul-10