U430 Datasheet, PDF (3/6 Pages) Vishay Siliconix – Matched N-Channel Pairs

U430/431
Vishay Siliconix
TYPICAL CHARACTERISTICS (T_A = 25_C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
100
50
I_DSS @ V_DS = 10 V, V_GS = 0 V
g_fs @ V_DS = 10 V, V_GS = 0 V
f = 1 kHz
80
40
10 nA
1 nA
Gate Leakage Current
T_A = 125_C
200 mA
I_G @ I_D = 10 mA
60
g_fs
40
I_DSS
20
30
100 pA
I_GSS @ 125_C
200 mA
20
10 pA
10 mA
T_A = 25_C
10
1 pA
I_GSS @ 25_C
0
0
–1
–2
–3
–4
V_GS(off) – Gate-Source Cutoff Voltage (V)
0
–5
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
100
300
r_DS @ I_D = 1 mA, V_GS = 0 V
g_os @ V_DS = 10 V, V_GS = 0 V, f = 1 kHz
80
240
60
180
40
g_os
20
120
r_DS
60
0.1 pA
0
3
4
9
12
15
V_DG – Drain-Gate Voltage (V)
Common-Source Forward Transconductance
vs. Drain Current
20
V_GS(off) = –3 V
V_DS = 10 V
f = 1 kHz
16
T_A = –55_C
12
25_C
8
125_C
4
0
0
0
–1
–2
–3
–4
–5
V_GS(off) – Gate-Source Cutoff Voltage (V)
Transconductance vs. Gate-Source Voltage
30
V_GS(off) = –1.5 V
V_DS = 10 V
f = 1 kHz
24
T_A = –55_C
25_C
18
125_C
12
6
0
0.1
1
10
I_D – Drain Current (mA)
Transconductance vs. Gate-Source Voltage
50
V_GS(off) = –3 V
40
V_DS = 10 V
f = 1 kHz
T_A = –55_C
30
25_C
20
125_C
10
0
0
–0.4
–0.8
–1.2
–1.6
–2
V_GS – Gate-Source Voltage (V)
Document Number: 70249
S-04031—Rev. E, 04-Jun-01
0
0
–0.6
–1.2
–1.8
–2.4
–3
V_GS – Gate-Source Voltage (V)
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