U430 Datasheet, PDF (2/6 Pages) Vishay Siliconix – Matched N-Channel Pairs

U430/431
Vishay Siliconix
SPECIFICATIONS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Static
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Current^b
Gate Reverse Current
Gate Operating Current
Gate-Source Forward Voltage
Dynamic
V_(BR)GSS
V_GS(off)
I_DSS
I_GSS
I_G
V_GS(F)
I_G = –1 mA, V_DS = 0 V
V_DS = 10 V, I_D = 1 nA
V_DS = 10 V, V_GS = 0 V
V_GS = –15 V, V_DS = 0 V
T_A = 150_C
V_DG = 10 V, I_D = 5 mA
T_A = 150_C
I_G = 10 mA , V_DS = 0 V
Common-Source
Forward Transconductance^b
Common-Source
Output Conductance^b
Common-Source
Input Capacitance
Common-Source
Reverse Transfer Capacitance
Equivalent Input Noise Voltage
g_fs
V_DS = 10 V, I_D = 10 mA , f = 1 kHz
g_os
C_iss
V_GS = –10 V, V_DS = 0 V, f = 1 MHz
C_rss
e_n
V_DS = 10 V, I_D = 10 mA
f = 100 Hz
High Frequency
Common-Source
Forward Transconductance
Common-Source
Output Conductance
Power-Match
Source Admittance
g_fs
g_os
V_DS = 10 V, I_D = 10 mA
f = 100 MHz
g_ig
Matching
Differential
Gate-Source Voltage
Saturation Drain
Current Ratio^c
Transconductance Ratio^c
Gate-Source
Cutoff Voltage Ratio^c
Differential Gate Current
Common Mode Rejection Ratio
|V_GS1–V_GS2|
I_DSS1
I_DSS2
g_fs1
g_fs2
V_GS(off)1
V_GS(off)2
|I_G1–I_G2|
CMRR
V_DG = 10 V, I_D = 10 mA
V_DS = 10 V, V_GS = 0 V
V_DS = 10 V, I_D = 10 mA, f = 1 kHz
V_DS = 10 V, I_D = 1 nA
V_DG = 10 V, I_D = 5 mA
V_DG = 5 to 10 V, I_D = 10 mA
Notes
a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
b. Pulse test: PW v300 ms duty cycle v3%.
c. Assumes smaller value in the numerator.
Typ^b
Limits
U430
U431
Min Max Min Max
–35 –25
–25
–1
–4
–2
–6
12
30
24
60
–5
–150
–150
–10
–150
–150
–15
–10
0.8
1
1
15
10
10
100
250
250
4.5
5
5
2
2.5
2.5
6
14
0.13
12
25
0.95 0.9
1
0.9
1
0.95 0.9
1
0.9
1
0.95 0.9
1
0.9
1
–2
75
Unit
V
mA
pA
nA
pA
nA
V
mS
mS
pF
nV⁄
√Hz
mS
mV
pA
dB
NZBD
www.vishay.com
8-2
Document Number: 70249
S-04031—Rev. E, 04-Jun-01