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U10BCT Datasheet, PDF (3/5 Pages) Vishay Siliconix – Dual Common-Cathode Ultrafast Rectifier
New Product
U(F,B)10BCT thru U(F,B)10DCT
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
12
Resistive or Inductive Load
10
U(B)10xCT
8
6
UF10xCT
4
2
0
0
25
50
75
100 125 150
Case Temperature (°C)
Figure 1. Maximum Forward Current Derating Curve
100
TJ = 150 °C
10
TJ = 125 °C
TJ = 25 °C
1
0.1
0.1
0.5
0.9
1.3
1.7
2.1
Instantaneous Forward Voltage (V)
Figure 4. Typical Instantaneous Forward Characteristics Per Diode
6
D = 0.8
D = 0.5
5
D = 0.3
D = 1.0
4
D = 0.2
D = 0.1
3
T
2
1
D = tp/T
tp
0
0
1
2
3
4
5
6
Average Forward Current (A)
Figure 2. Forward Power Loss Characteristics Per Diode
10 000
1000
100
TJ = 150 °C
TJ = 125 °C
10
1
TJ = 25 °C
0.1
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Figure 5. Typical Reverse Characteristics Per Diode
100
100
TJ = TJ max.
10 ms Single Half Sine-Wave
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
10
10
1
1
10
100
Number of Cycles
Figure 3. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
1
0.1
1
10
100
Reverse Voltage (V)
Figure 6. Typical Junction Capacitance Per Diode
Document Number: 88967 For technical questions within your region, please contact one of the following:
Revision: 13-May-08
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3