U10BCT Datasheet, PDF (2/5 Pages) Vishay Siliconix – Dual Common-Cathode Ultrafast Rectifier

New Product
U(F,B)10BCT thru U(F,B)10DCT
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T_C = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
I_F = 3.0 A
Maximum instantaneous forward voltage per diode ^{(1) IF = 5.0 A}
T_J = 25 °C
V_F
I_F = 3.0 A
I_F = 5.0 A
T_J = 150 °C
Maximum reverse current per diode ⁽²⁾
Maximum reverse recovery time per diode
rated V_R
T_J = 25 °C
T_J = 100 °C
I_R
I_F = 0.5 A, I_R = 1.0 A,
I_rr = 0.25 A
I_F = 1.0 A, dI/dt = 100 A/µs,
t_rr
V_R = 30 V, I_rr = 0.1 I_RM
Maximum stored charge per diode
I_F = 2 A, dI/dt = 20 A/µs,
V_R = 30 V, I_rr = 0.1 I_RM
Q_rr
Notes:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
TYP.
0.97
1.05
0.79
0.89
0.5
100
13
19.7
3
MAX.
-
1.10
-
0.95
5.0
200
20
25
9
UNIT
V
µA
ns
nC
THERMAL CHARACTERISTICS (T_C = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
U10xCT
Typical thermal resistance per diode
R_θJA
25
R_θJC
5.3
UF10xCT
25
7.5
UB10xCT
25
5.3
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT
TO-220AB
U10DCT-E3/4W
1.87
ITO-220AB
UF10DCT-E3/4W
1.77
TO-263AB
UB10DCT-E3/4W
1.31
TO-263AB
UB10DCT-E3/8W
1.31
PACKAGE CODE
4W
4W
4W
8W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
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For technical questions within your region, please contact one of the following: Document Number: 88967
[e-mail], [e-mail], [e-mail]
Revision: 13-May-08