TSHG8400_09 Datasheet, PDF (3/5 Pages) Vishay Siliconix – High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero

TSHG8400
High Speed Infrared Emitting Diode, _{Vishay Semiconductors}
830 nm, GaAlAs Double Hetero
BASIC CHARACTERISTICS
T_amb = 25 °C, unless otherwise specified
1000
t_P/T = 0.01 ^Tamb ^{< 50 °C}
0.02
0.05
0.1
0.2
0.5
100
0.01
0.1
1
10
100
16031
t_P - Pulse Duration (ms)
Fig. 3 - Pulse Forward Current vs. Pulse Duration
1000
100
t_P = 100 µs
t_P/T = 0.001
10
1
0
1
2
3
4
18873
V_F - Forward Voltage (V)
Fig. 4 - Forward Current vs. Forward Voltage
1000
100
10
1
0.1
1
18220
10
100
1000
I_F - Forward Current (mA)
Fig. 5 - Radiant Intensity vs. Forward Current
1000
100
10
1
0.1
1
10
100
1000
16971
I_F Forward Current (mA)
Fig. 6 - Radiant Power vs. Forward Current
1.25
1.0
0.75
0.5
0.25
0
740
800
900
16972_1
λ- Wavelength (nm)
Fig. 7 - Relative Radiant Power vs. Wavelength
0° 10° 20°
30°
40°
1.0
0.9
50°
0.8
60°
70°
0.7
80°
94 8883 ^{0.6 0.4 0.2}
0
Fig. 8 - Relative Radiant Intensity vs. Angular Displacement
Document Number: 81297
Rev. 1.2, 02-Jul-09
For technical questions, contact: [e-mail]
www.vishay.com
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