TSHG8400_09 Datasheet, PDF (1/5 Pages) Vishay Siliconix – High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero

TSHG8400
Vishay Semiconductors
High Speed Infrared Emitting Diode, 830 nm, GaAlAs Double Hetero
94 8389
DESCRIPTION
TSHG8400 is an infrared, 830 nm emitting diode in GaAlAs
double hetero (DH) technology with high radiant power and
high speed, molded in a clear, untinted plastic package.
FEATURES
• Package type: leaded
• Package form: T-1¾
• Dimensions (in mm): ∅ 5
• Peak wavelength: λ_p = 830 nm
• High reliability
• High radiant power
• High radiant intensity
• Angle of half intensity: ϕ = ± 22°
• Low forward voltage
• Suitable for high pulse current operation
• High modulation bandwidth: f_c = 18 MHz
• Good spectral matching with CMOS cameras
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21 definition
APPLICATIONS
• Infrared radiation source for operation with CMOS
cameras (illumination)
• High speed IR data transmission
PRODUCT SUMMARY
COMPONENT
TSHG8400
I_e (mW/sr)
70
Note
Test conditions see table “Basic Characteristics”
ϕ (deg)
± 22
λ_P (nm)
830
t_r (ns)
20
ORDERING INFORMATION
ORDERING CODE
TSHG8400
Note
MOQ: minimum order quantity
PACKAGING
Bulk
REMARKS
MOQ: 4000 pcs, 4000 pcs/bulk
PACKAGE FORM
T-1¾
ABSOLUTE MAXIMUM RATINGS
PARAMETER
TEST CONDITION
Reverse voltage
Forward current
Peak forward current
Surge forward current
Power dissipation
t_p/T = 0.5, t_p = 100 µs
t_p = 100 µs
Junction temperature
Operating temperature range
Storage temperature range
Soldering temperature
t ≤ 5 s, 2 mm from case
Thermal resistance junction/ambient
J-STD-051, leads 7 mm soldered
on PCB
Note
T_amb = 25 °C, unless otherwise specified
SYMBOL
V_R
I_F
I_FM
I_FSM
P_V
T_j
T_amb
T_stg
T_sd
R_thJA
VALUE
5
100
200
1
180
100
- 40 to + 85
- 40 to + 100
260
230
UNIT
V
mA
mA
A
mW
°C
°C
°C
°C
K/W
Document Number: 81297
Rev. 1.2, 02-Jul-09
For technical questions, contact: [e-mail]
www.vishay.com
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