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TSHF5200 Datasheet, PDF (3/6 Pages) Vishay Siliconix – High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
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TSHF5200
Vishay Semiconductors
1000
t p/ T= 0.01 Tamb< 50°
0.02
0.05
0.1
0.2
0.5
100
0.01
0.1
1.0
10
100
16031
tp - Pulse Duration ( ms )
Figure 3. Pulse Forward Current vs. Pulse Duration
10 4
10 3
10 2
10 1
10 0
0
1
2
3
4
94 8880
VF - Forward Voltage ( V )
Figure 4. Forward Current vs. Forward Voltage
1000
100
10
1
0.1
100
94 8881
101
102
103
104
IF – Forward Current ( mA )
Figure 6. Radiant Intensity vs. Forward Current
1000
100
10
1
0.1
100
94 8007
101
102
103
104
IF - Forward Current ( mA )
Figure 7. Radiant Power vs. Forward Current
1.2
1.1
IF = 10 mA
1.0
0.9
0.8
0.7
0
94 7990
20
40
60
80 100
Tamb - Ambient Temperature ( ° C )
Figure 5. Relative Forward Voltage vs. Ambient Temperature
1.6
1.2
0.8
0.4
0
–10 0 10
50
100
140
94 8882
Tamb – Ambient Temperature (°C )
Figure 8. Rel. Radiant Intensity/Power vs. Ambient Temperature
Document Number 81023
Rev. 1.5, 08-Mar-05
www.vishay.com
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