TSHF5200 Datasheet, PDF (1/6 Pages) Vishay Siliconix – High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero

TSHF5200
Vishay Semiconductors
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double
Hetero
Description
TSHF5200 is a high speed infrared light emitting
diode in GaAlAs on GaAlAs double hetero (DH) tech-
nology, molded on copper frame, in a clear, untinted
plastic package.
The new technology combines the high speed of DH-
GaAlAs with the efficiency of standard GaAlAs and
the low forward voltage of the standard GaAs technol-
94 8390
ogy.
The TSHF5200 emitter is suitable for serial infrared
links according to the IrDA-standard.
Features
• High modulation bandwidth (10 MHz)
• High radiant power
• Low forward voltage
• Suitable for high pulse current operation
• Standard T-1¾ (∅ 5 mm) package
• Angle of half intensity ϕ = ± 10°
• Peak wavelength λ_p = 870 nm
• High reliability
• Good spectral matching to Si photodetectors
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
Infrared high speed remote control and free air data
transmission systems with high modulation frequen-
cies or high data transmission rate requirements.
TSHF5200 is ideal for the design of transmission sys-
tems according to IrDA requirements and for carrier
frequency based systems (e.g. ASK / FSK - coded,
450 kHz or 1.3 MHz).
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Reverse Voltage
V_R
5
V
Forward current
I_F
100
mA
Peak Forward Current
t_p/T = 0.5, t_p = 100 µs
I_FM
200
mA
Surge Forward Current
t_p = 100 µs
I_FSM
1.5
A
Power Dissipation
P_V
160
mW
Junction Temperature
T_j
100
°C
Operating Temperature Range
T_amb
- 40 to + 100
°C
Storage Temperature Range
T_stg
- 40 to + 100
°C
Soldering Temperature
t ≤ 5 sec, 2 mm from case
T_sd
260
°C
Thermal Resistance Junction/
Ambient
R_thJA
270
K/W
Document Number 81023
Rev. 1.5, 08-Mar-05
www.vishay.com
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