TSDF1920W_08 Datasheet, PDF (3/5 Pages) Vishay Siliconix – 25 GHz Silicon NPN Planar RF Transistor

Electrical AC Characteristics
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Min
Transition frequency
V_CE = 2 V, I_C = 25 mA, f = 1 GHz
f_T
Collector-base capacitance
V_CB = 2 V, f = 1 MHz
C_cb
Collector-emitter capacitance V_CE = 2 V, f = 1 MHz
C_ce
Emitter-base capacitance
V_EB = 0.5 V, f = 1 MHz
C_eb
Noise figure
V_CE = 2 V, I_C = 5 mA, Z_S = Z_Sopt,
F
Z_L = Z_Lopt, f = 2 GHz
Power gain, maximum stable
gain
V_CE = 2 V, I_C = 25 mA,
Z_S = Z_Sopt, Z_L = Z_Lopt,
f = 2 GHz
G_pe = G_ms =
| S_21e/S_12e |
Transducer gain
V_CE = 2 V, I_C = 25 mA,
Z_S = Z_L= 50 Ω, f = 2 GHz
| S_21e | ²
13.5
Third order intercept point at V_CE = 2 V, I_C = 25 mA,
IP₃
output
Z_S = Z_L= 50 Ω, f = 2 GHz
1 dB compression point
V_CE = 2 V, I_C = 25 mA,
Z_S = Z_L= 50 Ω, f = 2 GHz
P_-1dB
Package Dimensions in mm
TSDF1920W
Vishay Semiconductors
Typ.
Max
Unit
24
GHz
0.15
0.3
pF
0.4
pF
0.6
pF
1.2
dB
19
dB
16.4
dB
22
dBm
12
dBm
96 12238
Document Number 85092
Rev. 1.4, 05-Sep-08
www.vishay.com
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