TSDF1920W_08 Datasheet, PDF (1/5 Pages) Vishay Siliconix – 25 GHz Silicon NPN Planar RF Transistor

Not for new design, this product will be obsoleted soon
TSDF1920W
Vishay Semiconductors
25 GHz Silicon NPN Planar RF Transistor
Features
• Very low noise figure
• Very high power gain
e3
• High transition frequency f_T = 24 GHz
• Low feedback capacitance
• Emitter pins are thermal leads
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
12
43
16712
Electrostatic sensitive device.
Observe precautions for handling.
Applications
For RF front-ends, low noise, and wideband applica-
tions, such as in analogue and digital cellular and
cordless phones
(DECT, PHD), in TV systems (e.g. satellite tuners), in
high frequency oscillators up to 12 GHz, in pagers
and radar detectors.
Mechanical Data
Case: SOT-343R Plastic case
Weight: approx. 6.0 mg
Pinning: 1 = Emitter, 2 = Base,
3 = Emitter, 4 = Collector
Parts Table
Part
TSDF1920W
Marking
YH3
SOT-343R
Package
Absolute Maximum Ratings
T_amb = 25 °C, unless otherwise specified
Parameter
Test condition
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Total power dissipation
Junction temperature
T_amb ≤ 60 °C
Storage temperature range
Symbol
Value
Unit
V_CBO
10
V
V_CEO
3.5
V
V_EBO
1.5
V
I_C
40
mA
P_tot
200
mW
T_j
150
°C
T_stg
- 65 to + 150
°C
Maximum Thermal Resistance
Parameter
Test condition
Symbol
Value
Unit
Junction ambient
1)
R_thJA
450
K/W
1) _{on glass fibre printed board (25 x 20 x 1.5) mm}3 _{plated with 35 μm Cu}
Document Number 85092
Rev. 1.4, 05-Sep-08
www.vishay.com
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