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TCMT110 Datasheet, PDF (3/9 Pages) Vishay Siliconix – Low temperature coefficient of CTR
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TCMT110. Series
Vishay Semiconductors
CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL MIN.
VCE = 5 V, IF = 5 mA
TCMT1100
CTR
50
TCMT1101
CTR
40
TCMT1102
CTR
63
VCE = 5 V, IF = 10 mA
TCMT1103
CTR
100
TCMT1104
CTR
160
IC/IF
TCMT1105
CTR
50
TCMT1106
CTR
100
VCE = 5 V, IF = 5 mA
TCMT1107
CTR
80
TCMT1108
CTR
130
TCMT1109
CTR
200
TYP.
MAX.
600
80
125
200
320
150
300
160
260
400
UNIT
%
%
%
%
%
%
%
%
%
%
SWITCHING CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL MIN.
Delay time
Rise time
VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 1)
td
VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 1)
tr
Fall time
Storage time
Turn-on time
Turn-off time
Turn-on time
Turn-off time
VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 1)
tf
VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 1)
ts
VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 1)
ton
VS = 5 V, IC = 2 mA, RL = 100 Ω, (see figure 1)
toff
VS = 5 V, IF = 10 mA, RL = 1 kΩ, (see figure 2)
ton
VS = 5 V, IF = 10 mA, RL = 1 kΩ, (see figure 2)
toff
TYP.
4.0
5.5
7.0
1.5
9.5
8.5
3.0
20.0
MAX.
UNIT
μs
μs
μs
μs
μs
μs
μs
μs
IF IF
0
R G = 50 Ω
tp
= 0.01
T
tp = 50 µs
50 Ω
+5V
IC = 2 mA; adjusted through
input amplitude
100 Ω
Channel I
Channel II
Oscilloscope
R L = 1 MΩ
C L = 20 pF
95 10804
Fig. 1 - Test Circuit, Non-Saturated Operation
IF IF = 10 mA
0
+5V
IC
IF
0
tp
IC
t
100 %
90 %
10 %
0
tp
td
tr
ton (= td + tr)
tr
td
t on
Pulse duration
Delay time
Rise time
Turn-on time
ts
tf
t off
ts
tf
toff (= ts + tf)
Fig. 3 - Switching Times
t
Storage time
Fall time
Turn-off time
96 11698
RG = 50 Ω
tp
= 0.01
T
t p = 50 µs
50 Ω
1 kΩ
Channel I
Channel II
Oscilloscope
RL ≥ 1 MΩ
CL ≤ 20 pF
95 10843
Fig. 2 - Test Circuit, Saturated Operation
Rev. 3.0, 10-Mar-16
3
Document Number: 83510
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