TCET1600_10 Datasheet, PDF (3/8 Pages) Vishay Siliconix – Optocoupler, Phototransistor Output, AC Input

TCET1600, TCET1600G
Optocoupler, Phototransistor Output, _{Vishay Semiconductors}
AC Input
CURRENT TRANSFER RATIO
PARAMETER
TEST CONDITION
I_C/I_F
V_CE = 5 V, I_F = ± 5 mA
SYMBOL
CTR
MIN.
20
TYP.
MAX.
300
UNIT
%
MAXIMUM SAFETY RATINGS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward current
OUTPUT
I_F
275
mA
Power dissipation
COUPLER
P_diss
400
mW
Rated impulse voltage
Safety temperature
V_IOTM
T_si
10
kV
175
°C
Note
• According to DIN EN 60747-5-2 (VDE 0884) (see figure 1). This optocoupler is suitable for safe electrical isolation only within the safety
ratings. Compliance with the safety ratings shall be ensured by means of suitable protective circuits.
INSULATION RATED PARAMETERS
PARAMETER
Partial discharge test voltage -
routine test
TEST CONDITION
100 %, t_test = 1 s
Partial discharge test voltage -
lot test (sample test)
t_Tr = 60 s, t_test = 10 s,
(see figure 2)
Insulation resistance
V_IO = 500 V
V_IO = 500 V, T_amb = 100 °C
V_IO = 500 V, T_amb = 150 °C
(construction test only)
SYMBOL
V_pd
V_IOTM
V_pd
R_IO
R_IO
R_IO
MIN.
1.669
10
1.424
10¹²
10¹¹
10⁹
TYP.
MAX.
UNIT
kV
kV
kV
Ω
Ω
Ω
450
400
350
300
250
200
150
100
50
0
0
22441
Phototransistor
P_si (mW)
IR-diode
I_si (mA)
25 50 75 100 125 150 175
T_si - Safety Temperature (°C)
Fig. 1 - Derating Diagram
V_IOTM
V_Pd
V_IOWM
V_IORM
t₁, t₂ = 1 to 10 s
t₃, t₄ = 1 s
t_test = 10 s
t_stres = 12 s
0
13930
t₁
t_Tr = 60 s
t₃ t_test t₄
t₂ t _stres
t
Fig. 2 - Test Pulse Diagram for Sample Test acc. to
DIN EN 60747-5-2 (VDE 0884); IEC60747-5-5
Document Number: 83538
Rev. 1.9, 10-Dec-10
For technical questions, contact: [e-mail]
www.vishay.com
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