TCED2100_08 Datasheet, PDF (3/8 Pages) Vishay Siliconix – Optocoupler, Photodarlington Output, Dual Channel, High Gain

TCED2100/TCED4100
Vishay Semiconductors ^{Optocoupler, Photodarlington Output,}
Dual Channel, High Gain
MAXIMUM SAFETY RATINGS
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward current
OUTPUT
I_F
130
mA
Power dissipation
COUPLER
P_diss
265
mW
Rated impulse voltage
Safety temperature
Note
V_IOTM
T_si
8
kV
150
°C
According to DIN EN 60747-5-5 (see figure 1). This optocoupler is suitable for safe electrical isolation only within the safety ratings. Compliance
with the safety ratings shall be ensured by means of suitable protective circuits.
INSULATION RATED PARAMETERS
PARAMETER
Partial discharge test voltage -
routine test
TEST CONDITION
100 %, t_test = 1 s
Partial discharge test voltage -
lot test (sample test)
t_Tr = 60 s, t_test = 10 s,
(see figure 2)
Insulation resistance
V_IO = 500 V
V_IO = 500 V, T_amb = 100 °C
V_IO = 500 V, T_amb = 150 °C
(construction test only)
SYMBOL
V_pd
V_IOTM
V_pd
R_IO
R_IO
R_IO
MIN.
1.6
8
1.3
10¹²
10¹¹
10⁹
TYP.
MAX.
UNIT
kV
kV
kV
Ω
Ω
Ω
300
250
Photodarlington
Psi (mW)
200
150
100
50
IR-Diode
Isi (mA)
0
0 25 50 75 100 125 150
14887
T_amb - Ambient Temperature (°C)
Fig. 1 - Derating Diagram
V_IOTM
V_Pd
V_IOWM
V_IORM
t₁, t₂ = 1 to 10 s
t₃, t₄ = 1 s
t_test = 10 s
t_stres = 12 s
0
13930
t₁
t_Tr = 60 s
t₃ t_test t₄
t₂ t _stres
t
Fig. 2 - Test Pulse Diagram for Sample Test According to
DIN EN 60747-5-5/DIN EN 60747-; IEC60747
SWITCHING CHARACTERISTICS
PARAMETER
TEST CONDITION
Rise time
Fall time
V_CC = 2 V, I_C = 10 mA, R_L = 100 Ω, (see figure 3)
V_CC = 2 V, I_C = 10 mA, R_L = 100 Ω, (see figure 3)
SYMBOL
t_r
t_f
MIN.
TYP.
300
250
MAX.
UNIT
µs
µs
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806
For technical questions, contact: [e-mail]
Document Number: 83728
Rev. 1.6, 16-May-08