TCED2100_08 Datasheet, PDF (2/8 Pages) Vishay Siliconix – Optocoupler, Photodarlington Output, Dual Channel, High Gain

TCED2100/TCED4100
Optocoupler, Photodarlington Output, _{Vishay Semiconductors}
Dual Channel, High Gain
ABSOLUTE MAXIMUM RATINGS ⁽¹⁾
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage
Forward current
Forward surge current
Power dissipation
Junction temperature
OUTPUT
t_p ≤ 10 µs
V_R
6
V
I_F
60
mA
I_FSM
1.5
A
P_diss
100
mW
T_j
125
°C
Collector emitter voltage
Emitter collector voltage
Collector current
Collector peak current
Power dissipation
Junction temperature
COUPLER
t_p/T = 0.5, t_p ≤ 10 ms
V_CEO
35
V
V_ECO
7
V
I_C
80
mA
I_CM
100
mA
P_diss
150
mW
T_j
125
°C
Isolation test voltage (RMS)
t = 1 min
V_ISO
5000
V_RMS
Total power dissipation
P_tot
250
mW
Operating ambient temperature range
T_amb
- 40 to + 100
°C
Storage temperature range
T_stg
- 55 to + 125
°C
Soldering temperature ⁽²⁾
2 mm from case, t ≤ 10 s
T_sld
260
°C
Notes
(1) _{Tamb = 25 °C, unless otherwise specified.}
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum
ratings for extended periods of the time can adversely affect reliability.
(2) _{Refer to wave profile for soldering conditions for throught hole devices.}
ELECTRICAL CHARACTERISTCS
PARAMETER
TEST CONDITION
SYMBOL MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
Junction capacitance
OUTPUT
I_F = 20 mA
V_F
V_R = 0 V, f = 1 MHz
C_j
1.15
1.4
V
50
pF
Collector emitter voltage
I_C = 1 mA
V_CEO
32
V
Emitter collector voltage
I_E = 100 µA
V_ECO
7
V
Collector ermitter cut-off current
V_CE = 10 V, I_f = 0 A, E = 0
I_CEO
15
100
nA
COUPLER
Collector emitter saturation voltage
I_F = 20 mA, I_C = 5 mA
Cut-off frequency
V_CE = 5 V, I_F = 10 mA, R_L = 100 Ω
V_CEsat
f_c
1
V
10
kHz
Coupling capacitance
f = 1 MHz
C_k
0.3
pF
Note
T_amb = 25 °C, unless otherwise specified.
Minimum and maximum values are tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
CURRENT TRANSFER RATIO
PARAMETER
TEST CONDITION
I_C/I_F
V_CE = 2 V, I_F = 1 mA
SYMBOL
CTR
MIN.
600
TYP.
800
MAX.
UNIT
%
Document Number: 83728
Rev. 1.6, 16-May-08
For technical questions, contact: [e-mail]
www.vishay.com
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