SUV85N10-10 Datasheet, PDF (3/5 Pages) Vishay Siliconix – N-Channel 100-V (D-S) 175 Degree Celcious MOSFET

New Product
SUV85N10-10
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
250
200
V_GS = 10 thru 6 V
200
5V
150
150
100
100
50
4V
50
3V
0
0
0
2
4
6
8
10
0
V_DS - Drain-to-Source Voltage (V)
Transconductance
250
T_C = - 55_C
200
25_C
150
125_C
100
50
0.020
0.015
0.010
0.005
Transfer Characteristics
T_C = 125_C
25_C
- 55_C
1
2
3
4
5
6
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
V_GS = 4.5 V
V_GS = 10 V
0
0
10000
8000
6000
20
40
60
80
100
I_D - Drain Current (A)
Capacitance
C_iss
0.000
0
20
20
40
60
80
100 120
I_D - Drain Current (A)
Gate Charge
16
V_DS = 50 V
I_D = 85 A
12
4000
8
2000
0
0
C_rss
C_oss
15
30
45
60
75
V_DS - Drain-to-Source Voltage (V)
Document Number: 72039
S-03601—Rev. B, 31-Mar-03
4
0
0
50
100
150
200
Q_g - Total Gate Charge (nC)
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