SUV85N10-10 Datasheet, PDF (1/5 Pages) Vishay Siliconix – N-Channel 100-V (D-S) 175 Degree Celcious MOSFET

New Product
SUV85N10-10
Vishay Siliconix
N-Channel 100-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V_(BR)DSS (V)
100
r_DS(on) (W)
0.0105 @ V_GS = 10 V
0.012 @ V_GS = 4.5 V
TO-262
I_D (A)
85 ^a
FEATURES
D TrenchFETr Power MOSFET
D 175_C Junction Temperature
APPLICATIONS
D DC/DC Primary Side Switch
D
1 23
G
G DS
Top View
SUV85N10-10
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_C = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
V_DS
100
V_GS
"20
Continuous Drain Current (T_J = 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy^b
Maximum Power Dissipation^b
Operating Junction and Storage Temperature Range
T_C = 25_C
T_C = 125_C
L = 0.1 mH
T_C = 25_C
T_A = 25_C ^d
I_D
I_DM
I_AR
E_AR
P_D
T_J, T_stg
85^a
60^a
240
75
280
250^c
3.75
- 55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case
PCB Mount^d
Free Air
Notes
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Document Number: 72039
S-03601—Rev. B, 31-Mar-03
Symbol
R_thJA
R_thJC
Limit
40
62.5
0.6
Unit
_C/W
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