SUP80090E Datasheet, PDF (3/8 Pages) Vishay Siliconix – N-Channel 150 V (D-S) MOSFET

www.vishay.com
TYPICAL CHARACTERISTICS (T_A = 25 °C, unless otherwise noted)
SUP80090E
Vishay Siliconix
Axis Title
250
10000
V_GS = 10 V thru 8 V
200
V_GS = 7 V
1000
150
Axis Title
150
10000
120
1000
90
100
50
0
0
100
V_GS = 6 V
V_GS = 5 V
10
2
4
6
8
10
V_DS - Drain-to-Source Voltage (V)
2nd line
Output Characteristics
60
30
0
0
T_C = 25 °C
100
T_C = 125 °C
T_C = -55 °C
2
4
6
8
V_GS - Gate-to-Source Voltage (V)
2nd line
Transfer Characteristics
10
10
Axis Title
75
10000
60
T_C = -55 °C
T_C = 25 °C
45
1000
30
T_C = 125 °C
100
15
0
10
0
5.0 10.0 15.0 20.0 25.0 30.0
I_D - Drain Current (A)
2nd line
Transconductance
0.011
Axis Title
10000
0.010
0.009
V_GS = 7.5 V
1000
0.008
0.007
100
V_GS = 10 V
0.006
0
20
40
60
80
I_D - Drain Current (A)
2nd line
10
100
On-Resistance vs. Drain Current
7000
Axis Title
10000
5600
4200
C_iss
2800
C_oss
1400
C_rss
1000
100
0
10
0
20
40
60
80
100
V_DS - Drain-to-Source Voltage (V)
2nd line
Capacitance
10
I_D = 60 A
8
6
4
2
Axis Title
V_DS = 50 V, 75 V, 100 V
10000
1000
100
0
10
0
14
28
42
56
70
Q_g - Total Gate Charge (nC)
2nd line
Gate Charge
S16-0087-Rev. A, 25-Jan-16
3
Document Number: 65384
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000