SUP80090E Datasheet, PDF (1/8 Pages) Vishay Siliconix – N-Channel 150 V (D-S) MOSFET

www.vishay.com
SUP80090E
Vishay Siliconix
N-Channel 150 V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) () MAX.
0.0094 at V_GS = 10 V
150
0.0110 at V_GS = 7.5 V
TO-220AB
I_D (A)
128
119
Q_g (TYP.)
63 nC
Top View
S
D
G
Ordering Information:
SUP80090E-GE3 (lead (Pb)-free and halogen-free)
FEATURES
• ThunderFET^® power MOSFET
• Maximum 175 °C junction temperature
• 100 % R_g and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
D
• Power supplies:
- Uninterruptible power supplies
- AC/DC switch-mode power supplies
- Lighting
• Synchronous rectification
G
• DC/DC converter
• Motor drive switch
• DC/AC inverter
S
• Solar micro inverter
N-Channel MOSFET
• Class D audio amplifier
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
Pulsed Drain Current (t = 100 μs)
Avalanche Current
Single Avalanche Energy ^a
Maximum Power Dissipation ^a
Operating Junction and Storage Temperature Range
T_C = 25 °C
T_C = 125 °C
L = 0.1 mH
T_C = 25 °C
T_C = 125 °C
V_DS
V_GS
I_D
I_DM
I_AS
E_AS
P_D
T_J, T_stg
LIMIT
150
± 20
128
74
240
60
180
375 ^b
125 ^b
-55 to +175
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient (PCB Mount) ^c
Junction-to-Case (Drain)
Notes
a. Duty cycle  1 %.
b. See SOA curve for voltage derating.
c. When mounted on 1" square PCB (FR4 material).
SYMBOL
R_thJA
R_thJC
LIMIT
40
0.4
UNIT
°C/W
S16-0087-Rev. A, 25-Jan-16
1
Document Number: 65384
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000