SUP75N08-10 Datasheet, PDF (3/4 Pages) Vishay Siliconix – N-Channel 75-V (D-S), 175 Degrees Celcious MOSFET

SUP/SUB75N08-10
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
250
V_GS = 10 V
9V
8V
200
7V
150
100
50
0
0
120
100
80
60
6V
4V
5V
2
4
6
8
10
V_DS – Drain-to-Source Voltage (V)
Transconductance
T_C = –55_C
25_C
125_C
Transfer Characteristics
200
150
100
50
0
0
T_C = 125_C
25_C
2
4
–55_C
6
8
V_GS – Gate-to-Source Voltage (V)
0.012
On-Resistance vs. Drain Current
0.010
0.008
0.006
V_GS = 10 V
V_GS = 20 V
40
0.004
20
0.002
0
0
7000
20
40
60
80
100
V_GS – Gate-to-Source Voltage (V)
Capacitance
6000
5000
C_iss
4000
3000
2000
1000
C_rss
C_oss
0
0
10
20
30
40
50
60
V_DS – Drain-to-Source Voltage (V)
0
0
20
40
60
80
100
I_D – Drain Current (A)
Gate Charge
20
16
V_DS = 30 V
I_D = 75 A
12
8
4
0
0
25 50 75 100 125 150 175
Q_g – Total Gate Charge (nC)
Document Number: 70263
S-57253—Rev. B, 24-Feb-98
www.vishay.com S FaxBack 408-970-5600
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