SUP75N08-10 Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 75-V (D-S), 175 Degrees Celcious MOSFET

SUP/SUB75N08-10
Vishay Siliconix
N-Channel 75-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V_(BR)DSS (V)
75
r_DS(on) (W)
0.010
I_D (A)
75^a
TO-220AB
TO-263
DRAIN connected to TAB
GD S
Top View
SUP75N08-10
G DS
Top View
SUB75N08-10
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_C = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Gate-Source Voltage
Continuous Drain Current
(T_J = 175_C)
T_C = 25_C
T_C = 125_C
V_GS
"20
75^a
I_D
55
Pulsed Drain Current
I_DM
240
Avalanche Current
Repetitive Avalanche Energy^b
Power Dissipation
I_AR
L = 0.1 mH
E_AR
T_C = 25_C (TO-220AB and TO-263)
T_A = 25_C (TO-263)^d
P_D
60
280
187^c
3.7
Operating Junction and Storage Temperature Range
T_J, T_stg
–55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Junction-to-Ambient
Junction-to-Case
Parameter
PCB Mount (TO-263)^d
Free Air (TO-220AB)
Notes
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Document Number: 70263
S-57253—Rev. B, 24-Feb-98
Symbol
R_thJA
R_thJC
Limit
40
62.5
0.8
Unit
_C/W
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