SUM110N10-09 Datasheet, PDF (3/5 Pages) Vishay Siliconix – N-Channel 100-V (D-S) 200C MOSFET

SUM110N10-09
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
250
250
V_GS = 10 thru 7 V
6V
200
200
Transfer Characteristics
150
150
100
50
0
0
250
200
150
100
5V
4V
2
4
6
8
10
V_DS − Drain-to-Source Voltage (V)
Transconductance
T_C = −55_C
25_C
125_C
100
50
0
0
T_C = 125_C
25_C
−55_C
1
2
3
4
5
6
7
V_GS − Gate-to-Source Voltage (V)
0.015
On-Resistance vs. Drain Current
0.012
0.009
V_GS = 10 V
0.006
50
0.003
0
0
10000
20
40
60
80
100 120
I_D − Drain Current (A)
Capacitance
8000
C_iss
6000
0.000
0
20
20
40
60
80
100 120
I_D − Drain Current (A)
Gate Charge
16
V_DS = 50 V
I_D = 85 A
12
4000
8
2000
0
0
C_rss
C_oss
25
50
75
100
V_DS − Drain-to-Source Voltage (V)
Document Number: 70677
S-32523—Rev. C, 08-Dec-03
4
0
0
50
100
150
200
Q_g − Total Gate Charge (nC)
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