SUM110N10-09 Datasheet, PDF (1/5 Pages) Vishay Siliconix – N-Channel 100-V (D-S) 200C MOSFET

SUM110N10-09
Vishay Siliconix
N-Channel 100-V (D-S) 200_C MOSFET
PRODUCT SUMMARY
V_(BR)DSS (V)
100
r_DS(on) (W)
0.0095 @ V_GS = 10 V
TO-263
I_D (A)
110 ^a
D
FEATURES
D TrenchFETr Power MOSFET
D 200_C Junction Temperature
D New Package with Low Thermal Resistance
D 100% R_g Tested
APPLICATIONS
D Automotive
− 42-V Power Bus
− DC/DC Conversion
− Motor Drivers
G DS
Top View
Ordering Information: SUM110N10-09
SUM110N10-09-E3 (Lead Free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_C = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
V_DS
100
V_GS
"20
Continuous Drain Current (T_J = 175_C)
Pulsed Drain Current
Avalanche Current
Repetitive Avalanche Energy^b
Maximum Power Dissipation^b
Operating Junction and Storage Temperature Range
T_C = 25_C
T_C = 125_C
L = 0.1 mH
T_C = 25_C
T_A = 25_C^d
I_D
I_DM
I_AR
E_AR
P_D
T_J, T_stg
110^a
87^a
440
75
280
437.5^c
3.75
−55 to 200
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case (Drain)
PCB Mount (TO-263)^d
Notes
a. Package limited.
b. Duty cycle v 1%.
c. See SOA curve for voltage derating.
d. When mounted on 1” square PCB (FR-4 material).
Document Number: 70677
S-32523—Rev. C, 08-Dec-03
Symbol
R_thJA
R_thJC
Limit
40
0.4
Unit
_C/W
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