SUF30G Datasheet, PDF (3/5 Pages) General Semiconductor – ULTRAFAST EFFICIENT PLASTIC RECTIFIER

100
T_J = 150 °C
10
T_J = 125 °C
1
T_J = 100 °C
0.1
0.01
0.2
T_J = 25 °C
SUF30G
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
1000
100
10
T_J = 150 °C
T_J = 125 °C
T_J = 100 °C
1
0.1
0.01
0
T_J = 25 °C
SUF30G
20
40
60
80
100
Percent of Peak Reverse Voltage (%)
Figure 4. Typical Reverse Leakage Characteristics
100
T_J = 150 °C
10
T_J = 125 °C
1
0.1
0.01
0.2
T_J = 25 °C
T_J = 100 °C
SUF30J
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Instantaneous Forward Voltage (V)
Figure 5. Typical Instantaneous Forward Characteristics
SUF30G & SUF30J
Vishay General Semiconductor
1000
100
T_J = 150 °C
T_J = 125 °C
10
T_J = 100 °C
1
0.1
0.01
0
T_J = 25 °C
SUF30J
20
40
60
80
100
Percent of Peak Reverse Voltage (%)
Figure 6. Typical Reverse Leakage Characteristics
1000
T_J = 25 °C
f = 1.0 MHz
V_sig = 50 mVp-p
100
10
0.1
1
10
100
Reverse Voltage (V)
Figure 7. Typical Junction Capacitance
100
10
1
0.1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Figure 8. Typical Transient Thermal Impedance
Document Number: 88754 For technical questions within your region, please contact one of the following:
Revision: 20-Aug-07
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