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SUF30G Datasheet, PDF (2/5 Pages) General Semiconductor – ULTRAFAST EFFICIENT PLASTIC RECTIFIER
SUF30G & SUF30J
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
SUF30G
SUF30J
Maximum instantaneous
forward voltage (1)
3.0 A
VF
1.8
2.0
Maximum peak reverse current
at rated peak reverse voltage
TA = 25 °C
TA = 100 °C
IR
10
100
Maximum reverse recovery time
IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A
trr
35
Typical junction capacitance
4.0 V, 1 MHz
CJ
60
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
UNIT
V
µA
ns
pF
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SUF30G
SUF30J
Typical thermal resistance (1)
RθJA
25
Note:
(1) Thermal resistance from junction to ambient at 0.200" (5.0 mm) lead length with both leads attached to heat sink
UNIT
°C/W
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g ) PREFERRED PACKAGE CODE
SUF30J-E3/54
1.834
54
SUF30J-E3/73
1.834
73
BASE QUANTITY
800
300
DELIVERY MODE
13" diameter paper tape and reel
Ammo pack packaging
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
3.0
Resistive or Inductive Load
2.5
2.0
0.200" (5 mm)
1.5
Lead Length
1.0
0.78 x 0.78 x 0.04"
0.5
(20 x 20 x 1 mm)
Copper Plate
0
20 40 60 80 100 120 140 160
Ambient Temperature (°C)
Figure 1. Forward Current Derating Curve
100
TA = 60 °C
8.3 ms Single Half Sine-Wave
10
1
1
10
100
Number of Cycles at 60 Hz
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
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2
For technical questions within your region, please contact one of the following: Document Number: 88754
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Revision: 20-Aug-07