SUD70N03-06P Datasheet, PDF (3/4 Pages) Vishay Siliconix – N-Channel 30-V (D-S) 175C MOSFET

New Product
SUD70N03-06P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Transconductance
120
0.015
T_C = −55_C
100
0.012
25_C
80
0.009
125_C
60
0.006
40
20
0.003
On-Resistance vs. Drain Current
V_GS = 4.5 V
V_GS = 10 V
0
0
10
20
30
40
50
4000
3500
I_D − Drain Current (A)
Capacitance
C_iss
3000
2500
2000
1500
1000
C_rss
500
C_oss
0
0
5
10
15
20
25
30
V_DS − Drain-to-Source Voltage (V)
0.000
0
10
20
40
60
80
100
I_D − Drain Current (A)
Gate Charge
8
V_DS = 15 V
I_D = 50 A
6
4
2
0
0
10
20
30
40
50
Q_g − Total Gate Charge (nC)
On-Resistance vs. Junction Temperature
2.0
V_GS = 10 V
I_D = 20 A
1.5
Source-Drain Diode Forward Voltage
100
T_J = 150_C
T_J = 25_C
1.0
10
0.5
0.0
−50 −25
0 25 50 75 100 125 150 175
T_J − Junction Temperature (_C)
Document Number: 72238
S-40427—Rev. C, 15-Mar-04
1
0
0.3
0.6
0.9
1.2
1.5
V_SD − Source-to-Drain Voltage (V)
www.vishay.com
3