SUD70N03-06P Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 30-V (D-S) 175C MOSFET

New Product
SUD70N03-06P
Vishay Siliconix
N-Channel 30-V (D-S) 175_C MOSFET
PRODUCT SUMMARY
V_DS (V)
30
r_DS(on) (W)
0.006 @ V_GS = 10 V
0.009 @ V_GS = 4.5 V
TO-252
I_D (A)^b
70
70
FEATURES
D TrenchFETr Power MOSFET
D High Current
D 100% R_g Tested
APPLICATIONS
D DC/DC Converters
− Optimized For Low Side
D Synchronous Rectifiers
D
GDS
Top View
Drain Connected to Tab
Ordering Information: SUD70N03-06P
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Avalanche Current, single pulse
Avalanche Energy, single pulse
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T_C = 25_C
T_C = 100_C
L = 0.1 mH
T_C = 25_C
T_A = 25_C
V_DS
V_GS
I_D
I_DM
I_S
I_AS
E_AS
P_D
T_J, T_stg
30
"20
70
70^b
100
27
45
101
88
8.3^a
−55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Case
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
b. Limited by package.
Document Number: 72238
S-40427—Rev. C, 15-Mar-04
t v 10 sec
Steady State
Symbol
R_thJA
R_thJC
Typical
15
40
1.4
Maximum
18
50
1.7
Unit
_C/W
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