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SUD50NP04-77P Datasheet, PDF (3/12 Pages) Vishay Siliconix – Complementary N- and P-Channel 40-V (D-S) MOSFET
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SUD50NP04-77P
Vishay Siliconix
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min. Typ.a Max. Unit
Dynamica
Turn-On Delay Time
Rise Time
td(on)
tr
N-Channel
VDD = 20 V, RL = 4 Ω
ID ≅ 5 A, VGEN = 10 V, Rg = 1 Ω
N-Ch
P-Ch
N-Ch
P-Ch
9
18
10
20
11
20
14
25
Turn-Off Delay Time
td(off)
Fall Time
tf
Turn-On Delay Time
td(on)
Rise Time
tr
Turn-Off Delay Time
td(off)
Fall Time
tf
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
Pulse Diode Forward Currenta
ISM
P-Channel
VDD = - 20 V, RL = 4 Ω
ID ≅ - 5 A, VGEN = - 10 V, Rg = 1 Ω
N-Channel
VDD = 20 V, RL = 4 Ω
ID ≅ 5 A, VGEN = 4.5 V, Rg = 1 Ω
P-Channel
VDD = - 20 V, RL = 4 Ω
ID ≅ - 5 A, VGEN = - 4.5 V, Rg = 1 Ω
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
TC = 25 °C
N-Ch
P-Ch
N-Ch
P-Ch
14
25
36
60
8
16
10
20
ns
18
30
47
80
14
25
60 110
14
25
35
60
10
20
13
25
8
-8
A
30
- 30
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
VSD
IS = 2 A
IS = - 2 A
N-Ch
P-Ch
trr
N-Ch
P-Ch
N-Channel
N-Ch
Qrr
IF = 2 A, di/dt = 100 A/µs, TJ = 25 °C P-Ch
0.805 1.2
V
- 0.76 - 1.2
19
30
ns
22
40
14
25
nC
22
40
Reverse Recovery Fall Time
Reverse Recovery Rise Time
ta
P-Channel
N-Ch
IF = - 2 A, di/dt = - 100 A/µs, TJ = 25 °C P-Ch
13
15
ns
N-Ch
6
tb
P-Ch
7
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 73989
S-80109-Rev. B, 21-Jan-08
www.vishay.com
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