SUD50NP04-77P Datasheet, PDF (1/12 Pages) Vishay Siliconix – Complementary N- and P-Channel 40-V (D-S) MOSFET

New Product
SUD50NP04-77P
Vishay Siliconix
Complementary N- and P-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
N-Channel 40
0.037 at V_GS = 10 V
0.046 at V_GS = 4.5 V
P-Channel
0.040 at V_GS = - 10 V
- 40
0.050 at V_GS = - 4.5 V
I_D (A)^{a Q}g ^(Typ.)
8
26
8
-8
25.5
-8
TO-252-4L
D-PAK
D
Top View
Drain Connected to
Tab
FEATURES
• TrenchFET^® Power MOSFET
• 100 % UIS Tested
APPLICATIONS
• Backlight Inverter for LCD Display
• Full Bridge DC/DC Converter
D
G₁
G₂
RoHS
COMPLIANT
S₁ G₁ S₂ G₂
Ordering Information: SUD50NP04-77P-T4-E3 (Lead (Pb)-free)
S₁
N-Channel MOSFET
S₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Unit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150 °C)
V_DS
40
- 40
V
V_GS
± 20
T_C = 25 °C
8^a
- 8^a
T_C = 70 °C
T_A = 25 °C
I_D
8^a
8^{a, b, c}
- 8^a
- 8^{a, b, c}
T_A = 70 °C
7^{b, c}
- 7.4^{b, c}
Pulsed Drain Current (10 µs Pulse Width)
Source-Drain Current Diode Current
Pulsed Source-Drain Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
I_DM
30
- 30
A
T_C = 25 °C
T_A = 25 °C
I_S
8^a
4.3^{b, c}
- 8^a
- 4.6^{b, c}
I_SM
30
- 30
L = 0.1 mH
I_AS
E_AS
7
2.45
15
11.25
mJ
T_C = 25 °C
10.8
24
T_C = 70 °C
T_A = 25 °C
P_D
6.9
5.2^{b, c}
15.3
5.6^{b, c}
W
T_A = 70 °C
3.3^{b, c}
3.6^{b, c}
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
N-Channel
Parameter
Symbol
Typ.
Maximum Junction-to-Ambient^{b, d}
t ≤ 10 s
R_thJA
20
Maximum Junction-to-Case (Drain)
Steady State
R_thJC
9.4
Notes:
a. Package Limited.
b. Surface Mounted on 1" x 1" FR4 Board.
c. t = 10 s.
d. Maximum under Steady State conditions is 60 °C/W (N-Channel) and 52 °C/W (P-Channel).
Max.
24
11.5
P-Channel
Typ. Max.
18
22
4.3
5.2
Unit
°C/W
Document Number: 73989
S-80109-Rev. B, 21-Jan-08
www.vishay.com
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