SUD50N03-11 Datasheet, PDF (3/4 Pages) Vishay Siliconix – N-Channel 30-V (D-S) 175C MOSFET

New Product
SUD50N03-11
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
200
100
V_GS = 10 thru 8 V
7V
160
80
6V
120
5V
60
80
4V
40
Transfer Characteristics
T_C = –55_C
25_C
125_C
40
3V
2V
0
0
2
4
6
8
10
V_DS – Drain-to-Source Voltage (V)
Transconductance
60
T_C = –55_C
50
25_C
125_C
40
30
20
10
0
0
2000
20
40
60
80
100
I_D – Drain Current (A)
Capacitance
1600
C_iss
1200
20
0
0
1
2
3
4
5
6
V_GS – Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.04
0.03
0.02
0.01
V_GS = 4.5 V
V_GS = 10 V
0
0
20
40
60
80
100
I_D – Drain Current (A)
Gate Charge
10
8
V_DS = 15 V
I_D = 50 A
6
800
4
C_oss
400
C_rss
2
0
0
5
10
15
20
25
30
V_DS – Drain-to-Source Voltage (V)
0
0
4
8
12
16
20
Q_g – Total Gate Charge (nC)
Document Number: 71187
S-01329—Rev. B, 12-Jun-00
www.vishay.com S FaxBack 408-970-5600
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