SUD50N03-11 Datasheet, PDF (2/4 Pages) Vishay Siliconix – N-Channel 30-V (D-S) 175C MOSFET

SUD50N03-11
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^b
Drain-Source On-State Resistance^b
Forward Transconductance^b
Dynamic^a
V_(BR)DSS
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_GS = 0 V, I_D = 250 mA
V_DS = V_GS, I_D = 250 mA
V_DS = 0 V, V_GS = "20 V
V_DS = 24 V, V_GS = 0 V
V_DS = 24 V, V_GS = 0 V, T_J = 125_C
V_DS = 5 V, V_GS = 5 V
V_GS = 10 V, I_D = 25 A
V_GS = 5 V, I_D = 20 A, T_J = 125_C
V_GS = 4.5 V, I_D = 15 A
V_DS = 15 V, I_D = 20 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge^c
Gate-Source Charge^c
Gate-Drain Charge^c
Turn-On Delay Time^c
Rise Time^c
Turn-Off Delay Time^c
Fall Time^c
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
V_GS = 0 V, V_DS = 25 V, F = 1 MHz
V_DS = 15 V, V_GS = 5 V, I_D = 50 A
V_DD = 15 V, R_L = 0.3 W
I_D ^ 50 A, V_GEN = 10 V, R_G = 2.5 W
Source-Drain Diode Ratings and Characteristic (T_C = 25_C)
Continuous Current
I_S
Pulsed Current
I_SM
Diode Forward Voltage^b
V_SD
Source-Drain Reverse Recovery Time
t_rr
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width v 300 ms, duty cycle v 2%.
c. Independent of operating temperature.
I_F = 100 A, V_GS = 0 V
I_F = 50 A, di/dt = 100 A/ms
Min Typ^a Max Unit
30
V
0.8
"100
nA
1
mA
50
50
A
0.009
0.011
0.018
W
0.014
0.017
10
S
1130
400
pF
175
12
20
4
nC
4.5
8
12
10
15
ns
18
30
6
9
50
A
80
1.5
V
30
50
ns
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2
Document Number: 71187
S-01329—Rev. B, 12-Jun-00