SUD50N03-09P Datasheet, PDF (3/4 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

SUD50N03-09P
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Transconductance
100
0.05
On-Resistance vs. Drain Current
80
0.04
T_C = −55_C
60
25_C
0.03
125_C
40
0.02
V_GS = 4.5 V
V_GS = 10 V
20
0.01
0
0
3000
2500
10
20
30
40
50
I_D − Drain Current (A)
Capacitance
C_iss
2000
1500
1000
500
C_rss
C_oss
0
0
5
10
15
20
25
30
V_DS − Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.0
V_GS = 10 V
I_D = 30 A
1.6
0.00
0
10
20
40
60
80
100
I_D − Drain Current (A)
Gate Charge
8
V_DS = 15 V
I_D = 30 A
6
4
2
0
0
6
12
18
24
30
Q_g − Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
100
1.2
T_J = 150_C
T_J = 25_C
10
0.8
0.4
0.0
−50 −25
0 25 50 75 100 125 150 175
T_J − Junction Temperature (_C)
Document Number: 71856
S-40573—Rev. E, 29-Mar-04
1
0
0.3
0.6
0.9
1.2
1.5
V_SD − Source-to-Drain Voltage (V)
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3