SUD50N03-09P Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

SUD50N03-09P
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.0095 @ V_GS = 10 V
30
0.014 @ V_GS = 4.5 V
TO-252
I_D (A)^b
63^b
52^b
FEATURES
D TrenchFETr Power MOSFET
D Optimized for High- or Low-Side
D 100% R_g Tested
APPLICATIONS
D DC/DC Converters
D Synchronous Rectifiers
D
GDS
Top View
Drain Connected to Tab
Ordering Information: SUD50N03-09P
SUD50N03-09P—E3 (Lead Free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T_C = 25_C
T_C = 100_C
L = 0.1 mH
T_C = 25_C
T_A = 25_C
V_DS
V_GS
I_D
I_DM
I_S
I_AS
E_AS
P_D
T_J, T_stg
30
"20
63^b
44.5^b
50
10
35
61
65.2
7.5^a
−55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Maximum Junction-to-Ambient^a
Maximum Junction-to-Case
t v 10 sec
Steady State
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
b. Based on maximum allowable Junction Temperature, package limitation current is 50 A.
R_thJA
R_thJC
Document Number: 71856
S-40573—Rev. E, 29-Mar-04
Typical
16
40
1.8
Maximum
20
50
2.3
Unit
_C/W
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