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SUD40N02-08_09 Datasheet, PDF (3/5 Pages) Vishay Siliconix – N-Channel 20-V (D-S), 175C MOSFET
SUD40N02-08
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
100
100
VGS = 4.5 thru 3 V
80
80
Transfer Characteristics
60
40
20
0
0
120
100
80
60
40
20
0
0
4500
2.5 V
2V
1, 0.5 V
2
4
6
8
10
VDS - Drain-to-Source Voltage (V)
Transconductance
TC = - 55_C
25_C
125_C
20
40
60
80
100
VGS - Gate-to-Source Voltage (V)
Capacitance
3600
Ciss
2700
1800
900
Crss
Coss
60
40
TC = 125_C
20
25_C
- 55_C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VGS - Gate-to-Source Voltage (V)
0.020
On-Resistance vs. Drain Current
0.015
0.010
VGS = 2.5 V
0.005
VGS = 4.5 V
0.000
0
12
20
40
60
80
100
ID - Drain Current (A)
Gate Charge
VGS = 10 V
9
ID = 40 A
6
3
0
0
4
8
12
16
20
VDS - Drain-to-Source Voltage (V)
Document Number: 71422
S-31724—Rev. B, 18-Aug-03
0
0
10 20 30 40 50 60 70
Qg - Total Gate Charge (nC)
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