SUD40N02-08_09 Datasheet, PDF (1/5 Pages) Vishay Siliconix – N-Channel 20-V (D-S), 175C MOSFET

SUD40N02-08
Vishay Siliconix
N-Channel 20-V (D-S), 175_C MOSFET
PRODUCT SUMMARY
V_DS (V)
20
r_DS(on) (W)
0.0085 @ V_GS = 4.5 V
0.014 @ V_GS = 2.5 V
TO-252
I_D (A)^a
40
40
FEATURES
D TrenchFETr Power MOSFET
D 175_C Maximum Junction Temperature
D 100% R_g Tested
D
GDS
Top View
Order Number:
SUD40N02-08
Drain Connected to Tab
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T_C = 25_C
T_C = 100_C
T_C = 25_C
T_A = 25_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
20
"12
40
40
100
40
71
8.3^{b, c}
- 55 to 175
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^b
Maximum Junction-to-Case
Notes
a. Package Limited
b. Surface Mounted on 1” x 1” FR4 Board
c. t v 10 sec
Document Number: 71422
S-31724—Rev. B, 18-Aug-03
t v 10 sec.
Steady State
Symbol
R_thJA
R_thJC
Typical
15
40
1.75
Maximum
18
50
2.1
Unit
_C/W
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