SS2PH9_15 Datasheet, PDF (3/5 Pages) Vishay Siliconix – High Voltage Surface Mount Schottky Barrier Rectifier

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SS2PH9, SS2PH10
Vishay General Semiconductor
100
T_J = 175 °C
10
T_J = 150 °C
1
T_J = 125 °C
T_J = 25 °C
0.1
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
1000
100
10
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
10 000
1000
100
10
T_J = 175 °C
T_J = 150 °C
T_J = 125 °C
1
0.1
T_J = 25 °C
0.01
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics
1000
100
10
1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-220AA (SMP)
Cathode Band
0.012 (0.30) REF.
0.086 (2.18)
0.074 (1.88)
0.053 (1.35)
0.041 (1.05)
0.142 (3.61)
0.126 (3.19)
0.158 (4.00)
0.146 (3.70)
0.013 (0.35)
0.004 (0.10)
0.012 (0.30) 0.018 (0.45)
0.000 (0.00) 0.006 (0.15)
0.045 (1.15)
0.033 (0.85)
0.100
(2.54)
0.103 (2.60)
0.087 (2.20)
0.105
(2.67)
0.036 (0.91)
0.024 (0.61)
0.032 (0.80)
0.016 (0.40)
0.025 0.030
(0.635) (0.762)
0.050
(1.27)
Revision: 16-Jan-14
3
Document Number: 84682
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