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SS2PH9_15 Datasheet, PDF (1/5 Pages) Vishay Siliconix – High Voltage Surface Mount Schottky Barrier Rectifier | |||
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www.vishay.com
SS2PH9, SS2PH10
Vishay General Semiconductor
High Voltage Surface Mount Schottky Barrier Rectifier
High Barrier Technology for Improved High Temperature Performance
eSMP ® Series
DO-220AA (SMP)
PRIMARY CHARACTERISTICS
IF(AV)
VRRM
IFSM
EAS
VF at IF = 1.0 A
IR max.
TJ max.
Package
2.0 A
90 V, 100 V
50 A
11.25 mJ
0.62 V
1.0 μA
175 °C
DO-220AA
Diode variations
Single
TYPICAL APPLICATIONS
For use in high frequency inverters, freewheeling, DC/DC
converters, and polarity protection applications.
FEATURES
⢠Very low profile - typical height of 1.0 mm
Available
⢠Ideal for automated placement
⢠Low forward voltage drop, low power losses
⢠High efficiency
⢠Low thermal resistance
⢠Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
⢠AEC-Q101 qualified
⢠Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
MECHANICAL DATA
Case: DO-220AA (SMP)ï
Molding compound meets UL 94 V-0 flammability ratingï
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial gradeï
Base P/NHM3 - halogen-free, RoHS-compliant, and
automotive grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102ï
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode endï
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
VRRM
IF(AV)
IFSM
Non-repetitive avalanche energy at TJ = 25 °C, IAS = 1.5 A, L = 10 mH
Voltage rate of change (rated VR)
Operating junction and storage temperature range
EAS
dV/dt
TJ, TSTG
SS2PH9
29
90
SS2PH10
210
100
2.0
50
11.25
10 000
-55 to +175
UNIT
V
A
A
mJ
V/μs
°C
Revision: 16-Jan-14
1
Document Number: 84682
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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