SS1H9-E3 Datasheet, PDF (3/4 Pages) Vishay Siliconix – High-Voltage Surface Mount Schottky Rectifier

www.vishay.com
SS1H9, SS1H10
Vishay General Semiconductor
100
T_J = 175 °C
10 ^{TJ = 150 °C}
1000
1
T_J = 125 °C
100
0.1
T_J = 25 °C
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
10
0.1
1
10
100
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
10 000
1000
100
10
T_J = 175 °C
T_J = 150 °C
T_J = 125 °C
1
T_J = 25 °C
0.1
0.01
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
100
10
1
0.01
0.1
1
10
100
t - Pulse Duration (s)
Fig. 6 - Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-214AC (SMA)
Cathode Band
0.065 (1.65)
0.049 (1.25)
0.110 (2.79)
0.100 (2.54)
Mounting Pad Layout
0.066 (1.68)
MIN.
0.074 (1.88)
MAX.
0.090 (2.29)
0.078 (1.98)
0.060 (1.52)
0.030 (0.76)
0.177 (4.50)
0.157 (3.99)
0.012 (0.305)
0.006 (0.152)
0.060 (1.52)
MIN.
0.208 (5.28)
REF.
0.008 (0.203)
0 (0)
0.208 (5.28)
0.194 (4.93)
Revision: 14-Dec-12
3
Document Number: 88747
For technical questions within your region: [e-mail], [e-mail], [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000