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SS1H9-E3 Datasheet, PDF (1/4 Pages) Vishay Siliconix – High-Voltage Surface Mount Schottky Rectifier
www.vishay.com
SS1H9, SS1H10
Vishay General Semiconductor
High-Voltage Surface Mount Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
DO-214AC (SMA)
PRIMARY CHARACTERISTICS
IF(AV)
1.0 A
VRRM
90 V to 100 V
IFSM
50 A
VF
0.62 V
IR
1.0 µA
TJ max.
175 °C
FEATURES
• Low profile package
• Ideal for automated placement
• Guardring for overvoltage protection
• Low powevr losses, high efficiency
• Low forward voltage drop
• Low leakage current
• High surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications.
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B, .....)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
VRRM
VRWM
VDC
IF(AV)
IFSM
Peak repetitive reverse surge current at tp = 2.0 μs, 1 kHz
Storage temperature range
Maximum operating temperature
IRRM
TSTG
TJ
SS1H9
S9
90
90
90
SS1H10
S10
100
100
100
1.0
50
1.0
- 65 to + 175
175
UNIT
V
V
V
A
A
A
°C
°C
Revision: 14-Dec-12
1
Document Number: 88747
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000