SQM100P06-9M3L_15 Datasheet, PDF (3/9 Pages) Vishay Siliconix – Automotive P-Channel 60 V (D-S) 175 °C MOSFET

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TYPICAL CHARACTERISTICS (T_A = 25 °C, unless otherwise noted)
200
150
V_GS = 10 V thru 7 V
V_GS = 6 V
160
120
SQP100P06-9m3L
Vishay Siliconix
120
90
80
40
0
0
150
120
V_GS = 5 V
2
4
6
8
10
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
T_C = 25 °C
T_C = - 55 °C
60
T_C = 25 °C
30
T_C = 125 °C
0
0
2
T_C = - 55 °C
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
0.025
0.020
90
0.015
T_C = 125 °C
V_GS = 4.5 V
60
0.010
30
0.005
V_GS = 10 V
0
0
15000
12000
9000
12
24
36
48
60
I_D - Drain Current (A)
Transconductance
C_iss
0.000
0
20
40
60
80
100 120
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
I_D = 100 A
8
V_DS = 30 V
6
6000
4
3000
C_oss
0
C_rss
0
10
20
30
40
50
60
V_DS - Drain-to-Source Voltage (V)
2
0
0
40
80
120
160
200
Q_g - Total Gate Charge (nC)
Capacitance
Gate Charge
S14-2075-Rev. A, 03-Nov-14
3
Document Number: 62971
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000