SQM100P06-9M3L_15 Datasheet, PDF (1/9 Pages) Vishay Siliconix – Automotive P-Channel 60 V (D-S) 175 °C MOSFET

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SQP100P06-9m3L
Vishay Siliconix
Automotive P-Channel 60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω) at V_GS = -10 V
R_DS(on) (Ω) at V_GS = -4.5 V
I_D (A)
Configuration
TO-220AB
-60
0.0093
0.0133
-100
Single
FEATURES
• TrenchFET^® power MOSFET
• Package with low thermal resistance
• AEC-Q101 qualified ^d
• 100 % R_g and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
S
G
Top View
S
D
G
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
D
P-Channel MOSFET
TO-220
SQP100P06-9m3L-GE3
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
T_C = 25 °C
I_D
T_C = 125 °C
Continuous Source Current (Diode Conduction) ^a
I_S
Pulsed Drain Current ^b
I_DM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
I_AS
L = 0.1 mH
E_AS
Maximum Power Dissipation ^b
T_C = 25 °C
P_D
T_C = 125 °C
Operating Junction and Storage Temperature Range
T_J, T_stg
LIMIT
-60
± 20
-100
-58
-120
-300
-70
245
187
62
-55 to +175
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
PCB Mount ^c
Notes
a. Package limited.
b. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
c. When mounted on 1" square Pcb (Fr-4 material).
d. Parametric verification ongoing.
SYMBOL
R_thJA
R_thJC
LIMIT
40
0.8
UNIT
°C/W
S14-2075-Rev. A, 03-Nov-14
1
Document Number: 62971
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000