SQ4483EEY Datasheet, PDF (3/10 Pages) Vishay Siliconix – Automotive P-Channel 30 V (D-S) 175 °C MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SQ4483EEY
Vishay Siliconix
0.005
0.004
T_J = 25 °C
0.003
0.002
0.001
0.000
0
7
14
21
28
35
V_GS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
80
V_GS = 10 V thru 4 V
60
V_GS = 3 V
40
20
0
0
0.05
2
4
6
8
10
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.04
0.03
V_GS = 4.5 V
0.02
0.01
V_GS = 10 V
0.00
0
14
28
42
56
70
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10-2
10-3
10-4
10-5
T_J = 150 °C
10-6
10-7
T_J = 25 °C
10-8
10-9
10-10
0
6
12
18
24
30
V_GS - Gate-to-Source Voltage (V)
Gate Current vs. Gate-Source Voltage
50
40
30
20 ^{TC = 25 °C}
10
T_C = 125 °C
T_C = - 55 °C
0
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
3000
2400
1800
1200
C_oss
600
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
S12-1848-Rev. B, 30-Jul-12
3
Document Number: 67090
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