SQ4483EEY Datasheet, PDF (1/10 Pages) Vishay Siliconix – Automotive P-Channel 30 V (D-S) 175 °C MOSFET

www.vishay.com
SQ4483EEY
Vishay Siliconix
Automotive P-Channel 30 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) () at V_GS = - 10 V
R_DS(on) () at V_GS = - 4.5 V
I_D (A)
Configuration
S1
S2
S3
G4
SO-8
8D
7D
6D
G
5D
- 30
0.0085
0.0200
- 22
Single
S
5400 Ω
FEATURES
• TrenchFET^® Power MOSFET
• ESD Protection: 3000 V
• 100 % R_g and UIS Tested
• AEC-Q101 Qualified^c
• Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
Top View
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
P-Channel
D
SO-8
SQ4483EEY-T1-GE3
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
T_C = 25 °C
T_C = 125 °C
I_D
Continuous Source Current (Diode Conduction)
I_S
Pulsed Drain Current^a
I_DM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
I_AS
E_AS
Maximum Power Dissipation^a
T_C = 25 °C
T_C = 125 °C
P_D
Operating Junction and Storage Temperature Range
T_J, T_stg
LIMIT
- 30
± 20
- 22
- 13
-6
- 84
- 50
125
7
2
- 55 to + 175
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. When mounted on 1" square PCB (FR-4 material).
c. Parametric verification ongoing.
PCB Mount^b
SYMBOL
R_thJA
R_thJF
LIMIT
85
21
UNIT
°C/W
S12-1848-Rev. B, 30-Jul-12
1
Document Number: 67090
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000