SISS10DN Datasheet, PDF (3/9 Pages) Vishay Siliconix – N-Channel 40 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SiSS10DN
Vishay Siliconix
Axis Title
150
10000
V_GS = 10 V thru 4 V
120
1000
90
60
30
0
0
100
V_GS = 3 V
V_GS = 2 V
10
0.5
1
1.5
2
2.5
V_DS - Drain-to-Source Voltage (V)
2nd line
Output Characteristics
Axis Title
150
10000
120
1000
90
60
30
0
0
T_C = 25 °C
100
T_C = 125 °C
T_C = -55 °C
1
2
3
4
V_GS - Gate-to-Source Voltage (V)
2nd line
Transfer Characteristics
10
5
0.005
Axis Title
10000
0.004
0.003
V_GS = 4.5 V
1000
0.002
0.001
100
V_GS = 10 V
0
10
0
20
40
60
80
100
I_D - Drain Current (A)
2nd line
On-Resistance vs. Drain Current
4500
3600
2700
Axis Title
C_iss
10000
1000
1800
900
0
0
C_oss
100
C_rss
8
16
24
32
V_DS - Drain-to-Source Voltage (V)
2nd line
Capacitance
10
40
Axis Title
10
I_D = 10 A
8
V_DS = 20V
6
V_DS = 10V
4
2
10000
V_DS = 30V
1000
100
0
10
0
11
22
33
44
55
Q_g - Total Gate Charge (nC)
2nd line
Gate Charge
Axis Title
2.0
10000
1.7
I_D = 15 A
1.4
V_GS = 10 V
1000
1.1
V_GS = 4.5 V
100
0.8
0.5
-50
10
-25 0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
2nd line
On-Resistance vs. Junction Temperature
S16-0219-Rev. A, 08-Feb-16
3
Document Number: 65439
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000