SIS890DN Datasheet, PDF (3/13 Pages) Vishay Siliconix – N-Channel 100 V (D-S) MOSFET

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
60
20
V_GS = 10 V thru 6 V
V_GS = 5 V
48
16
SiS890DN
Vishay Siliconix
36
24
12
0
0
0.10
V_GS = 4 V
V_GS = 3 V
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
12
8
T_C = 25 °C
4
T_C = 125 °C
0
0
1
2
T_C = - 55 °C
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
1200
0.08
0.06
V_GS = 4.5 V
0.04
0.02
V_GS = 7.5 V
V_GS = 10 V
0.00
0
16
32
48
64
80
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 10 A
8
V_DS = 50 V
6
V_DS = 25 V
4
V_DS = 75 V
960
C_iss
720
C_oss
480
240
C_rss
0
0
16
32
48
64
80
V_DS - Drain-to-Source Voltage (V)
Capacitance
2.0
I_D = 10 A
1.7
V_GS = 10 V
1.4
V_GS = 4.5 V
1.1
2
0.8
0
0
4
8
12
16
20
Q_g - Total Gate Charge (nC)
Gate Charge
0.5
- 50 - 25
0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 63867
For technical questions, contact: [e-mail]
www.vishay.com
S12-0973-Rev. A, 30-Apr-12
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000