SIR788DP Datasheet, PDF (3/13 Pages) Vishay Telefunken – N-Channel 30 V (D-S) MOSFET with Schottky Diode

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
100
10
V_GS = 10 V thru 4 V
80
8
SiR788DP
Vishay Siliconix
60
V_GS = 3 V
40
20
0
0.0
0.0040
V_GS = 2 V
0.5
1.0
1.5
2.0
2.5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.0036
0.0032
V_GS = 4.5 V
6
4
T_C = 25 °C
2
T_C = 125 °C
T_C = - 55 °C
0
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
3700
2960
C_iss
2220
0.0028
0.0024
V_GS = 10 V
0.0020
0
20
40
60
80
100
I_D - Drain Current (A)
On-Resistance vs. Drain Current and Gate Voltage
10
I_D = 10 A
8
V_DS = 15 V
6
4
V_DS = 10 V
V_DS = 20 V
2
0
0
11
22
33
44
55
Q_g - Total Gate Charge (nC)
Gate Charge
1480
C_oss
740
C_rss
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.8
I_D = 20 A
1.6
V_GS = 10 V
1.4
1.2
V_GS = 4.5 V
1.0
0.8
0.6
- 50 - 25
0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 63659
www.vishay.com
S12-0808-Rev. A, 16-Apr-12
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000