SIJA52DP Datasheet, PDF (3/10 Pages) Vishay Siliconix – N-Channel 40 V (D-S) MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SiJA52DP
Vishay Siliconix
150
120
90
60
30
0
0
Axis Title
V_GS = 10 V thru 4 V
V_GS = 3 V
10000
1000
100
V_GS = 2 V
10
0.5
1
1.5
2
2.5
V_DS - Drain-to-Source Voltage (V)
2nd line
Output Characteristics
Axis Title
200
10000
160
1000
120
80
40
0
0
T_C = 25 °C
100
T_C = 125 °C
T_C = -55 °C
1
2
3
4
V_GS - Gate-to-Source Voltage (V)
2nd line
Transfer Characteristics
10
5
0.003
Axis Title
10000
0.0024
0.0018
V_GS = 4.5 V
1000
0.0012
0.0006
100
V_GS = 10 V
0
10
0
20
40
60
80
100
I_D - Drain Current (A)
2nd line
On-Resistance vs. Drain Current
10000
8000
6000
Axis Title
C_iss
10000
1000
4000
2000
0
0
C_oss
100
C_rss
8
16
24
32
V_DS - Drain-to-Source Voltage (V)
2nd line
Capacitance
10
40
Axis Title
10
I_D = 10 A
8
V_DS = 20 V
6
V_DS = 10 V
4
2
10000
V_DS = 30 V ¹⁰⁰⁰
100
0
10
0
20
40
60
80
100
Q_g - Total Gate Charge (nC)
2nd line
Gate Charge
2.0
1.7
I_D = 15 A
1.4
1.1
0.8
Axis Title
10000
V_GS = 10 V
1000
V_GS = 4.5 V
100
0.5
-50
10
-25 0 25 50 75 100 125 150
T_J - Junction Temperature (°C)
2nd line
On-Resistance vs. Junction Temperature
S16-0749-Rev. A, 25-Apr-16
3
Document Number: 67387
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