SIHJ6N65E Datasheet, PDF (3/11 Pages) Vishay Siliconix – E Series Power MOSFET

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
SiHJ6N65E
Vishay Siliconix
15
TOP 15 V
14 V
13 V
12 V
12
11 V
10 V
9V
8V
7V
9
6V
BOTTOM 5 V
6
T_J = 25 °C
3
0
0
5
10
15
20
V_DS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
3.0
I_D = 3 A
2.5
2.0
1.5
1.0
V_GS = 10 V
0.5
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
8
TOP 15 V
14 V
13 V
12 V
11 V
6
10 V
9V
8V
7V
6V
BOTTOM 5 V
4
T_J = 150 °C
2
0
0
5
10
15
20
V_DS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
10 000
1000
100
10
C_iss
C_oss
C_rss
V_GS = 0 V, f = 1 MHz
C_iss = C_gs + C_gd, C_ds shorted
C_rss = C_gd
C_oss = C_ds + C_gd
1
0
100 200 300 400 500 600
V_DS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
15
12
9
6
3
0
0
T_J = 25 °C
T_J = 150 °C
V_DS = 31 V
5
10
15
20
V_GS, Gate-to-Source Voltage (V)
10 000
5
4.5
4
1000
C_oss
3.5
3
E_oss
2.5
2
100
1.5
1
0.5
10
0
0
100 200 300 400 500 600
V_DS
Fig. 3 - Typical Transfer Characteristics
Fig. 6 - C_oss and E_oss vs. V_DS
S16-0840-Rev. B, 09-May-16
3
Document Number: 91589
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