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SIHJ6N65E Datasheet, PDF (2/11 Pages) Vishay Siliconix – E Series Power MOSFET
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SiHJ6N65E
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage (N)
Gate-Source Leakage
VDS
VDS/TJ
VGS(th)
IGSS
Zero Gate Voltage Drain Current
IDSS
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance, Energy
Related a
Effective Output Capacitance, Time
Related b
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Input Resistance
Drain-Source Body Diode Characteristics
RDS(on)
gfs
Ciss
Coss
Crss
Co(er)
Co(tr)
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Rg
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 20 V
VGS = ± 30 V
VDS = 650 V, VGS = 0 V
VDS = 520 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 3 A
VDS = 30 V, ID = 3 A
VGS = 0 V,
VDS = 100 V,
f = 1 MHz
VDS = 0 V to 520 V, VGS = 0 V
VGS = 10 V
ID = 3 A, VDS = 520 V
VDD = 520 V, ID = 3 A,
VGS = 10 V, Rg = 9.1 
f = 1 MHz
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the 
D
Pulsed Diode Forward Current
integral reverse
G
ISM
p - n junction diode
S
MIN. TYP. MAX. UNIT
650
-
-
V
-
0.8
-
V/°C
2.0
-
4.0
V
-
- ± 100 nA
-
-
±1
μA
-
-
1
μA
-
-
10
-
0.755 0.868 
-
1.8
-
S
-
596
-
-
35
-
-
4
-
pF
-
26
-
-
90
-
-
16
32
-
5
-
nC
-
7
-
-
14
28
-
14
28
ns
-
25
50
-
17
34
0.4
0.8
1.6

-
-
5.6
A
-
-
12
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
VSD
trr
Qrr
IRRM
TJ = 25 °C, IS = 3 A, VGS = 0 V
TJ = 25 °C, IF = IS = 3 A,
dI/dt = 100 A/μs, VR = 25 V
-
0.9
1.2
V
-
278 556 ns
-
2.1
4.2
μC
-
12
-
A
Notes
a. Coss(er) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 % to 80 % VDSS.
b. Coss(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 % to 80 % VDSS.
S16-0840-Rev. B, 09-May-16
2
Document Number: 91589
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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