SIHG44N65EF Datasheet, PDF (3/7 Pages) Vishay Siliconix – E Series Power MOSFET with Fast Body Diode

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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
3.0
150 ^TOP
15 V
14 V
T_J = 25 °C
13 V
12 V
11 V
2.5
120
10 V
9V
8V
7V
2.0
6V
90 ^{BOTTOM 5 V}
1.5
I_D = 22 A
60
1.0
30
0.5
SiHG44N65EF
Vishay Siliconix
V_GS = 10 V
0
0
5
10
15
20
V_DS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
T_J, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
TOP 15 V
14 V
80
13 V
12 V
11 V
10 V
9V
60
8V
7V
6V
BOTTOM 5 V
40
20
T_J = 150 °C
100 000
10 000
1000
100
10
1
C_iss
C_oss
V_GS = 0 V, f = 1 MHz
C_iss = C_gs + C_gd, C_ds shorted
C_rss = C_gd
C_oss = C_ds + C_gd
C_rss
0
0
5
10
15
20
V_DS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics
0.1
0
100 200 300 400 500 600
V_DS, Drain-to-Source Voltage (V)
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
180
T_J = 25 °C
150
120
90
T_J = 150 °C
60
30
V_DS = 22.2 V
0
0
5
10
15
20
V_GS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
35
5000
30
C_oss
500
25
E_oss
20
15
10
5
50
0
100 200 300 400 500
V_DS
Fig. 6 - C_oss and E_oss vs. V_DS
0
600
S16-0524-Rev. A, 21-Mar-16
3
Document Number: 91792
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